Memory Design Engineer

hace 4 días


Tlaquepaque, Jalisco, México Micron A tiempo completo

We are seeking a highly skilled Memory Design Engineer to join our team at Micron Technology, Inc. in Guadalajara, Mexico.

As a key member of our design team, you will be responsible for designing and analyzing digital and analog circuits used in the development of memory products.

This is an exciting opportunity to work on groundbreaking silicon-to-systems solutions, from technology development and advanced memory designs to product development, systems design, and validation.

You will have the chance to develop your skills working in an inclusive diverse environment of multicultural teams across worldwide geographies.

The salary for this position is estimated to be around $120,000 - $180,000 per year, depending on experience level.

In this role, you will contribute to the development of new DRAM product, DRAM logic IPs, design flows and methodologies.

You will also oversee the layout process including floor planning, placement, and routing.

An ideal candidate should have a BS with 7+ years' experience or MS with 5+ years' experience in CMOS Circuit Design and Device Physics.

Strong experience with memory (NAND, DRAM, NOR, SRAM, etc.) design is also preferred.

Familiarity with schematic entry and simulation using Finesim or Hspice is a plus.

We offer a competitive benefits package, including medical, dental, and vision insurance, 401(k) matching, and paid time off.

Micron Technology, Inc. is an equal opportunity employer and prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.


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