DRAM Design Lead for Memory Innovation

hace 2 meses

Tlaquepaque, Jalisco, México Micron A tiempo completo
Transforming Memory with DRAM Design Leadership

We are seeking a highly skilled DRAM Design Lead to join our innovative team at Micron Technology, Inc. This is an exciting opportunity to lead the development of new DRAM products, drive design methodology teams' goals, and contribute to the transformation of memory solutions.

About the Role

The ideal candidate will have a strong background in CMOS Circuit Design and Device Physics, with proven experience in leading teams and driving innovation in high-performance memory development.

This is a challenging role that requires excellent problem-solving skills, the ability to communicate complex technical concepts, and a passion for collaboration and teamwork.

Responsibilities
  • Lead a team of engineers to develop digital and analog circuits used in the development of memory products.
  • Drive design methodology teams' goals and objectives.
  • Evaluate and identify best-known practices and communicate them to all DRAM teams.
  • Provide regular performance feedback and coaching to team members.
Requirements
  • BS with 7+ years' experience or MS with 5+ years' experience.
  • +3 years' experience of the team leader or manager role that manages a team with >5 people.
  • Proven knowledge/experience of CMOS Circuit Design and Device Physics.
What We Offer

We offer a competitive salary, benefits, and opportunities for growth and development. The estimated salary for this role is $120,000 - $180,000 per year, based on location and experience.

This is a unique opportunity to join a world-leading company in the memory industry and contribute to the development of groundbreaking technologies.

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